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See Product Specifications
| номер части: | PBSS8110AS,126 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Box (TB) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | e61c2e8e49eca0e4942ddb2b339c10b0 |
| Voltage - Collector Emitter Breakdown (Max): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Vce Saturation (Max) @ Ib, Ic: | 9449558720274ba70f779bc3b59e92e1 |
| Current - Collector Cutoff (Max): | 32b393dd42a00176cc680e2867c85be4 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | d1595e3ca14f3d08006395fdf30663fa |
| Power - Max: | 5285b6e159a34b5fff4e3c55f174052d |
| Frequency - Transition: | 4e737283b3b5e11a92b4e86c5967a37e |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
