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See Product Specifications
| номер части: | PDTA113EMB,315 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 61de53416e92e38b3c8ecc0dac09cf4e |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | c7d0b039d450e0b47960ff5c6d7b074e |
| Resistor - Emitter Base (R2): | c7d0b039d450e0b47960ff5c6d7b074e |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 0337f9e6799d3366604266caff796330 |
| Vce Saturation (Max) @ Ib, Ic: | c317f9036ae044b0946f6722348a7fae |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| Frequency - Transition: | e84b1a03cdbe3ed801f5f13b2fa595dc |
| Power - Max: | 4fc51ef5c84234f5674c824aac586f27 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 712561badb0e7c3e9ec18eb67d158a45 |
| Supplier Device Package: | 206e763e75b22ff7f967fa1ab5cf74b8 |
