PDTA113EMB,315

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See Product Specifications

Mfr. #:

PDTA113EMB,315

Mfr.:

NXP USA Inc.

Описание:

NOW NEXPERIA PDTA113EMB - SMALL

Упаковка:

Bulk

Datasheet:

PDTA113EMB,315 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PDTA113EMB,315
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	61de53416e92e38b3c8ecc0dac09cf4e
Current - Collector (Ic) (Max):	63f9c0b014d9e8860c3239712547a74a
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	c7d0b039d450e0b47960ff5c6d7b074e
Resistor - Emitter Base (R2):	c7d0b039d450e0b47960ff5c6d7b074e
DC Current Gain (hFE) (Min) @ Ic, Vce:	0337f9e6799d3366604266caff796330
Vce Saturation (Max) @ Ib, Ic:	c317f9036ae044b0946f6722348a7fae
Current - Collector Cutoff (Max):	deeb8c7cafdc46f12ef41020ec559854
Frequency - Transition:	e84b1a03cdbe3ed801f5f13b2fa595dc
Power - Max:	4fc51ef5c84234f5674c824aac586f27
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	712561badb0e7c3e9ec18eb67d158a45
Supplier Device Package:	206e763e75b22ff7f967fa1ab5cf74b8

In Stock: 140000

Stock:

140000 Can Ship Immediately