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See Product Specifications
| номер части: | PDTA114EEAF |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | 61de53416e92e38b3c8ecc0dac09cf4e |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | 62be411690721884738e929c9aa26f03 |
| Resistor - Emitter Base (R2): | 62be411690721884738e929c9aa26f03 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 32445bcea1e303baccf7af7d22b86d8d |
| Vce Saturation (Max) @ Ib, Ic: | 4ae20ada8dca14e7a8fa27578a596f15 |
| Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 |
| Frequency - Transition: | e84b1a03cdbe3ed801f5f13b2fa595dc |
| Power - Max: | 0e9fa846564772a23d270a6aaa046f54 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | b0007eeb26c56df960a54f9851bcc1aa |
| Supplier Device Package: | 2e010b833edb256c3274bfba1c9f9a23 |
