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номер части: | PDTA115EK,115 |
Категория: | Discrete Semiconductor Products |
Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Производитель: | NXP USA Inc. |
Упаковка: | Tape & Reel (TR) |
Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
Transistor Type: | 61de53416e92e38b3c8ecc0dac09cf4e |
Current - Collector (Ic) (Max): | 29e104a6158411e0111489b0730bf1eb |
Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
Resistor - Base (R1): | f38162f05d4d792ac692f82a59bb3e2c |
Resistor - Emitter Base (R2): | f38162f05d4d792ac692f82a59bb3e2c |
DC Current Gain (hFE) (Min) @ Ic, Vce: | b971ba7c54d5fd21a790e84a95cddbbc |
Vce Saturation (Max) @ Ib, Ic: | e61ff4fa353c3aa540d0601a110c83ce |
Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 |
Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
Power - Max: | 4fc51ef5c84234f5674c824aac586f27 |
Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
Package / Case: | 51bf93173785f0f3fc2d8b70cf119689 |
Supplier Device Package: | b41976d07d7f31a57d33ed61b96cac2d |