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номер части: | PDTA115TS,126 |
Категория: | Discrete Semiconductor Products |
Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Производитель: | NXP USA Inc. |
Упаковка: | Tape & Box (TB) |
Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
Transistor Type: | 61de53416e92e38b3c8ecc0dac09cf4e |
Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
Resistor - Base (R1): | f38162f05d4d792ac692f82a59bb3e2c |
Resistor - Emitter Base (R2): | 336d5ebc5436534e61d16e63ddfca327 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 66099a91b91d1e56378f840a3ac515d7 |
Vce Saturation (Max) @ Ib, Ic: | e61ff4fa353c3aa540d0601a110c83ce |
Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 |
Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
Power - Max: | 518423de9d41db9800c9bf822055b790 |
Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 |
Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |