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See Product Specifications
| номер части: | PDTA143EMB,315 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Vce Saturation (Max) @ Ib, Ic: | 4ae20ada8dca14e7a8fa27578a596f15 |
| Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | b5649911283d0f52bb0bbde9996ebd7e |
| Power - Max: | 4fc51ef5c84234f5674c824aac586f27 |
| Frequency - Transition: | 519cb02ef39499cb7686f9d5a6bdf39d |
| Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 712561badb0e7c3e9ec18eb67d158a45 |
| Supplier Device Package: | 206e763e75b22ff7f967fa1ab5cf74b8 |
