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See Product Specifications
| номер части: | PDTB123ES,126 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Box (TB) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | 61de53416e92e38b3c8ecc0dac09cf4e |
| Current - Collector (Ic) (Max): | 431e7d6cd9f66043047f49ab44061d9d |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | e85102c5e32a145a3450a496c2a5e52d |
| Resistor - Emitter Base (R2): | e85102c5e32a145a3450a496c2a5e52d |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 0d46121d6614511f3812b4ba68331d2a |
| Vce Saturation (Max) @ Ib, Ic: | cfdd99a8ec02ff51a12054e29977e04d |
| Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 518423de9d41db9800c9bf822055b790 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
