PDTB143EQA147

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See Product Specifications

Mfr. #:

PDTB143EQA147

Mfr.:

NXP USA Inc.

Описание:

PDTB143EQA SMALL SIGNAL FET

Упаковка:

Bulk

Datasheet:

PDTB143EQA147 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PDTB143EQA147
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	61de53416e92e38b3c8ecc0dac09cf4e
Current - Collector (Ic) (Max):	431e7d6cd9f66043047f49ab44061d9d
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	dc3f5fcfc7cb3c6d8293145b4a3f57f5
Resistor - Emitter Base (R2):	dc3f5fcfc7cb3c6d8293145b4a3f57f5
DC Current Gain (hFE) (Min) @ Ic, Vce:	8e0a69e11816b461d3450f5929edb8d8
Vce Saturation (Max) @ Ib, Ic:	bdfb55644b806b872700925454e04f35
Current - Collector Cutoff (Max):	53e8de3c9eceac47a1afcf3e46115044
Frequency - Transition:	ca9fe9aa2daf874a2a66999df2ccd8c2
Power - Max:	d44f3837eb4cfa3f72e18cb54111769f
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	140ae768c8b93f831f3d042a6e70d753
Supplier Device Package:	1796a4a8886b1eae662b782b93634663

In Stock: 13950

Stock:

13950 Can Ship Immediately