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See Product Specifications
| номер части: | PDTB143EQA147 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 61de53416e92e38b3c8ecc0dac09cf4e |
| Current - Collector (Ic) (Max): | 431e7d6cd9f66043047f49ab44061d9d |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | dc3f5fcfc7cb3c6d8293145b4a3f57f5 |
| Resistor - Emitter Base (R2): | dc3f5fcfc7cb3c6d8293145b4a3f57f5 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 8e0a69e11816b461d3450f5929edb8d8 |
| Vce Saturation (Max) @ Ib, Ic: | bdfb55644b806b872700925454e04f35 |
| Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
| Frequency - Transition: | ca9fe9aa2daf874a2a66999df2ccd8c2 |
| Power - Max: | d44f3837eb4cfa3f72e18cb54111769f |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 140ae768c8b93f831f3d042a6e70d753 |
| Supplier Device Package: | 1796a4a8886b1eae662b782b93634663 |
