PDTC114EE,115

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See Product Specifications

Mfr. #:

PDTC114EE,115

Mfr.:

NXP USA Inc.

Описание:

TRANS PREBIAS NPN 150MW SC75

Упаковка:

Tape & Reel (TR)

Datasheet:

PDTC114EE,115 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PDTC114EE,115
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	2118df2aa458b1e26181f0df8cbeda82
Current - Collector (Ic) (Max):	63f9c0b014d9e8860c3239712547a74a
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	62be411690721884738e929c9aa26f03
Resistor - Emitter Base (R2):	62be411690721884738e929c9aa26f03
DC Current Gain (hFE) (Min) @ Ic, Vce:	32445bcea1e303baccf7af7d22b86d8d
Vce Saturation (Max) @ Ib, Ic:	4ae20ada8dca14e7a8fa27578a596f15
Current - Collector Cutoff (Max):	ead55925e8c07a2f78b816cf419138f6
Frequency - Transition:	4180e6fbbead4d5dc35af585acaf30de
Power - Max:	0e9fa846564772a23d270a6aaa046f54
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	b0007eeb26c56df960a54f9851bcc1aa
Supplier Device Package:	2e010b833edb256c3274bfba1c9f9a23

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