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See Product Specifications
| номер части: | PDTC114YM315 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | 62be411690721884738e929c9aa26f03 |
| Resistor - Emitter Base (R2): | 942094f166c564b47b30fc312241d4ad |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | ea79faceb7131ee8946ded196653e762 |
| Vce Saturation (Max) @ Ib, Ic: | 6140e97446a204e2db30877b6e91a840 |
| Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 |
| Frequency - Transition: | 4180e6fbbead4d5dc35af585acaf30de |
| Power - Max: | 4fc51ef5c84234f5674c824aac586f27 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 712561badb0e7c3e9ec18eb67d158a45 |
| Supplier Device Package: | cf7fc7038e85b59b6d183e7d8a726a3e |
