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See Product Specifications
| номер части: | PDTC115EMB,315 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | NXP Semiconductors |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 |
| Current - Collector (Ic) (Max): | 29e104a6158411e0111489b0730bf1eb |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | f38162f05d4d792ac692f82a59bb3e2c |
| Resistor - Emitter Base (R2): | f38162f05d4d792ac692f82a59bb3e2c |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | b971ba7c54d5fd21a790e84a95cddbbc |
| Vce Saturation (Max) @ Ib, Ic: | e61ff4fa353c3aa540d0601a110c83ce |
| Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 |
| Frequency - Transition: | 4180e6fbbead4d5dc35af585acaf30de |
| Power - Max: | 4fc51ef5c84234f5674c824aac586f27 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 712561badb0e7c3e9ec18eb67d158a45 |
| Supplier Device Package: | 206e763e75b22ff7f967fa1ab5cf74b8 |
