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See Product Specifications
| номер части: | PDTC115ES,126 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Box (TB) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 |
| Current - Collector (Ic) (Max): | 29e104a6158411e0111489b0730bf1eb |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | f38162f05d4d792ac692f82a59bb3e2c |
| Resistor - Emitter Base (R2): | f38162f05d4d792ac692f82a59bb3e2c |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | b971ba7c54d5fd21a790e84a95cddbbc |
| Vce Saturation (Max) @ Ib, Ic: | e61ff4fa353c3aa540d0601a110c83ce |
| Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 518423de9d41db9800c9bf822055b790 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
