PDTC115ES,126

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See Product Specifications

Mfr. #:

PDTC115ES,126

Mfr.:

NXP USA Inc.

Описание:

TRANS PREBIAS NPN 500MW TO92-3

Упаковка:

Tape & Box (TB)

Datasheet:

PDTC115ES,126 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PDTC115ES,126
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	NXP USA Inc.
Упаковка:	Tape & Box (TB)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	2118df2aa458b1e26181f0df8cbeda82
Current - Collector (Ic) (Max):	29e104a6158411e0111489b0730bf1eb
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	f38162f05d4d792ac692f82a59bb3e2c
Resistor - Emitter Base (R2):	f38162f05d4d792ac692f82a59bb3e2c
DC Current Gain (hFE) (Min) @ Ic, Vce:	b971ba7c54d5fd21a790e84a95cddbbc
Vce Saturation (Max) @ Ib, Ic:	e61ff4fa353c3aa540d0601a110c83ce
Current - Collector Cutoff (Max):	ead55925e8c07a2f78b816cf419138f6
Frequency - Transition:	336d5ebc5436534e61d16e63ddfca327
Power - Max:	518423de9d41db9800c9bf822055b790
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	10ad7c3d9ef615310ca330c41d6c2435
Supplier Device Package:	775aaf4acf8e3036c8c22ccdfd356aef

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Stock:

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