PDTC123JK,115

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See Product Specifications

Mfr. #:

PDTC123JK,115

Mfr.:

NXP USA Inc.

Описание:

TRANS PREBIAS NPN 250MW SMT3

Упаковка:

Tape & Reel (TR)

Datasheet:

PDTC123JK,115 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PDTC123JK,115
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	2118df2aa458b1e26181f0df8cbeda82
Current - Collector (Ic) (Max):	63f9c0b014d9e8860c3239712547a74a
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	e85102c5e32a145a3450a496c2a5e52d
Resistor - Emitter Base (R2):	942094f166c564b47b30fc312241d4ad
DC Current Gain (hFE) (Min) @ Ic, Vce:	60c2e828c07a3c61b47e1d8a84723411
Vce Saturation (Max) @ Ib, Ic:	6140e97446a204e2db30877b6e91a840
Current - Collector Cutoff (Max):	ead55925e8c07a2f78b816cf419138f6
Frequency - Transition:	336d5ebc5436534e61d16e63ddfca327
Power - Max:	4fc51ef5c84234f5674c824aac586f27
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	51bf93173785f0f3fc2d8b70cf119689
Supplier Device Package:	b41976d07d7f31a57d33ed61b96cac2d

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Stock:

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