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| номер части: | PDTC124ES,126 | 
| Категория: | Discrete Semiconductor Products | 
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased | 
| Производитель: | NXP USA Inc. | 
| Упаковка: | Tape & Box (TB) | 
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 | 
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 | 
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a | 
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 | 
| Resistor - Base (R1): | dddab9c6f150f7ebed027692047db6db | 
| Resistor - Emitter Base (R2): | dddab9c6f150f7ebed027692047db6db | 
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 367c1cf4af14e77375cae996c4268c86 | 
| Vce Saturation (Max) @ Ib, Ic: | 4ae20ada8dca14e7a8fa27578a596f15 | 
| Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 | 
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 | 
| Power - Max: | 518423de9d41db9800c9bf822055b790 | 
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 | 
| Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 | 
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |