PDTD113EK,115

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See Product Specifications

Mfr. #:

PDTD113EK,115

Mfr.:

NXP USA Inc.

Описание:

TRANS PREBIAS NPN 250MW SMT3

Упаковка:

Tape & Reel (TR)

Datasheet:

PDTD113EK,115 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PDTD113EK,115
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	2118df2aa458b1e26181f0df8cbeda82
Current - Collector (Ic) (Max):	431e7d6cd9f66043047f49ab44061d9d
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	c7d0b039d450e0b47960ff5c6d7b074e
Resistor - Emitter Base (R2):	c7d0b039d450e0b47960ff5c6d7b074e
DC Current Gain (hFE) (Min) @ Ic, Vce:	98b6bc2462db3f3f6a0bc7e3f6d8f3c3
Vce Saturation (Max) @ Ib, Ic:	cfdd99a8ec02ff51a12054e29977e04d
Current - Collector Cutoff (Max):	53e8de3c9eceac47a1afcf3e46115044
Frequency - Transition:	336d5ebc5436534e61d16e63ddfca327
Power - Max:	4fc51ef5c84234f5674c824aac586f27
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	51bf93173785f0f3fc2d8b70cf119689
Supplier Device Package:	b41976d07d7f31a57d33ed61b96cac2d

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Stock:

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