PDTD113ES,126

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Mfr. #:

PDTD113ES,126

Mfr.:

NXP USA Inc.

Описание:

TRANS PREBIAS NPN 500MW TO92-3

Упаковка:

Tape & Box (TB)

Datasheet:

PDTD113ES,126 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PDTD113ES,126
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	NXP USA Inc.
Упаковка:	Tape & Box (TB)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	2118df2aa458b1e26181f0df8cbeda82
Current - Collector (Ic) (Max):	431e7d6cd9f66043047f49ab44061d9d
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	c7d0b039d450e0b47960ff5c6d7b074e
Resistor - Emitter Base (R2):	c7d0b039d450e0b47960ff5c6d7b074e
DC Current Gain (hFE) (Min) @ Ic, Vce:	98b6bc2462db3f3f6a0bc7e3f6d8f3c3
Vce Saturation (Max) @ Ib, Ic:	cfdd99a8ec02ff51a12054e29977e04d
Current - Collector Cutoff (Max):	53e8de3c9eceac47a1afcf3e46115044
Frequency - Transition:	336d5ebc5436534e61d16e63ddfca327
Power - Max:	518423de9d41db9800c9bf822055b790
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	10ad7c3d9ef615310ca330c41d6c2435
Supplier Device Package:	775aaf4acf8e3036c8c22ccdfd356aef

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Stock:

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