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See Product Specifications
| номер части: | PDTD123EK,115 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 |
| Current - Collector (Ic) (Max): | 431e7d6cd9f66043047f49ab44061d9d |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | e85102c5e32a145a3450a496c2a5e52d |
| Resistor - Emitter Base (R2): | e85102c5e32a145a3450a496c2a5e52d |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 0d46121d6614511f3812b4ba68331d2a |
| Vce Saturation (Max) @ Ib, Ic: | cfdd99a8ec02ff51a12054e29977e04d |
| Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 4fc51ef5c84234f5674c824aac586f27 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 51bf93173785f0f3fc2d8b70cf119689 |
| Supplier Device Package: | b41976d07d7f31a57d33ed61b96cac2d |
