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See Product Specifications
| номер части: | PEMB1,115 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 3c4f188edba860ebd19850af474c12fd |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Resistor - Base (R1): | e98eba4dfaa3532a28746dd29c67ce0e |
| Resistor - Emitter Base (R2): | e98eba4dfaa3532a28746dd29c67ce0e |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 367c1cf4af14e77375cae996c4268c86 |
| Vce Saturation (Max) @ Ib, Ic: | 4ae20ada8dca14e7a8fa27578a596f15 |
| Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 2940c137f79e4ef421e163569997f029 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 86215ac6c939e87a911385cbe7e7abfb |
| Supplier Device Package: | e4646523faf039ff8db13d5c0ec7163a |
