PH3120L,115-NXP

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See Product Specifications

Mfr. #:

PH3120L,115-NXP

Mfr.:

NXP USA Inc.

Описание:

POWER FIELD-EFFECT TRANSISTOR, 1

Упаковка:

Bulk

Datasheet:

PH3120L,115-NXP Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PH3120L,115-NXP
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	4cd988b83fc990b9e8358853bdd4f330
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	d8748786de18728287ba7ad6bb47bf39
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	c12c05f49fcdf1f2a9bd3657e339d36c
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	1339c69779010db2fa4bb113a99feab5
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	e6115e6b64f7d623eb1f668cebc67c58
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	9cc28b89246b1d3406f15784a316dd1e
Package / Case:	5c758174f491275ad8924bc0627a08e5