PH9030AL115

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See Product Specifications

Mfr. #:

PH9030AL115

Mfr.:

NXP USA Inc.

Описание:

POWER FIELD-EFFECT TRANSISTOR

Упаковка:

Bulk

Datasheet:

PH9030AL115 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PH9030AL115
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	95b2ecd25f7bc428057a11ce849516e5
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	649d91d7f031c9f170936149b092229e
Vgs(th) (Max) @ Id:	d24e6db4779d3029fba3c8cafcffc684
Gate Charge (Qg) (Max) @ Vgs:	bb01ba53641f588c825c18c0949d9539
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	b30f8922d8e1996323c8b3b6b5273c90
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	9cc28b89246b1d3406f15784a316dd1e
Package / Case:	5c758174f491275ad8924bc0627a08e5