PHB112N06T,118

Images are for reference only
See Product Specifications

Mfr. #:

PHB112N06T,118

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 55V 75A D2PAK

Упаковка:

Tape & Reel (TR)

Datasheet:

PHB112N06T,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHB112N06T,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	2f23d6284d881f9576110d827b42bb45
Current - Continuous Drain (Id) @ 25°C:	2fc830bfd797ff874a4ada6c6cd6f876
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	40b9ee69132336bcc95f9a93371fcc42
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	74a6448a896a88502ae078c451cdbfee
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4e8d797c71e70bbc52ce0a3160ef7983
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a8b3f64040b1225c2cc8b3728386572f
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	28dc10fa1251e54eadc93e4958741fed
Package / Case:	99446f4470b43888d0c78d7d2cdfc956

In Stock: 0

Stock:

0 Can Ship Immediately