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See Product Specifications
| номер части: | PHB112N06T,118 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 2f23d6284d881f9576110d827b42bb45 |
| Current - Continuous Drain (Id) @ 25°C: | 2fc830bfd797ff874a4ada6c6cd6f876 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 40b9ee69132336bcc95f9a93371fcc42 |
| Vgs(th) (Max) @ Id: | e059cfdd0b6079599844a290801e2b56 |
| Gate Charge (Qg) (Max) @ Vgs: | 74a6448a896a88502ae078c451cdbfee |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 4e8d797c71e70bbc52ce0a3160ef7983 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | a8b3f64040b1225c2cc8b3728386572f |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 28dc10fa1251e54eadc93e4958741fed |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
