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See Product Specifications
| номер части: | PHD108NQ03LT,118 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 622fb57dec9cae5648afabcd559f8856 |
| Current - Continuous Drain (Id) @ 25°C: | 2fc830bfd797ff874a4ada6c6cd6f876 |
| Drive Voltage (Max Rds On, Min Rds On): | f55852362a6379a6e139b5f0e28daf22 |
| Rds On (Max) @ Id, Vgs: | 7270010620a6747bc11688c049abc83d |
| Vgs(th) (Max) @ Id: | 25509f2d81b84ad0de9368a2b900ad19 |
| Gate Charge (Qg) (Max) @ Vgs: | 575afa29fc512d3bf4669a33b08fc82a |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 55fff382de5c313647ee89fb2883dd09 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 4e1bc16d0bd887e283d442b719c94467 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 26e4778ee70ff342a4cdee16eb8f56f1 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
