PHD18NQ10T,118

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See Product Specifications

Mfr. #:

PHD18NQ10T,118

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 18A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

PHD18NQ10T,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHD18NQ10T,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	066e0bb89d610303369c0ca2b47f7252
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	ef5565de07f63d9f5b9a6a13400f5a15
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	82b113cefa8bdd5383fff44f641f8fc1
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b4c6ff612ddf685ab610cff4bb2194e2
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c2695bd87197b90c9094095e9837d774
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95