PHD34NQ10T,118

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Mfr. #:

PHD34NQ10T,118

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 35A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

PHD34NQ10T,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHD34NQ10T,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	822fa9074467f53dd633c6786e269596
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	6bf4f12c245996617ad31d1ce09989a9
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	b6ab5da133ad4bb28468094ad6d872e7
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	df74227c9fa673f24bc58e6faa71c3bd
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	35f3eecaa3bd22ad34ab7c60509c09d1
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95

In Stock: 0

Stock:

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