PHE13009/DG,127

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See Product Specifications

Mfr. #:

PHE13009/DG,127

Mfr.:

NXP USA Inc.

Описание:

NOW WEEN - PHE13009 - POWER BIPO

Упаковка:

Bulk

Datasheet:

PHE13009/DG,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHE13009/DG,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	e3d31b6d6c1368232482785f7e6d9bd1
Current - Collector (Ic) (Max):	acf70af5797317fd532641fd68230c32
Voltage - Collector Emitter Breakdown (Max):	a51e6c3b115ead349deb13cbf5a43f23
Vce Saturation (Max) @ Ib, Ic:	e353794f8fd7a643e90b85a12b3197af
Current - Collector Cutoff (Max):	b51414a9f787dc8957b6b45f6f550202
DC Current Gain (hFE) (Min) @ Ic, Vce:	84d035b4ccac1014e2f7ce8f2037951f
Power - Max:	d28abbf52015a7f73986c7b43f042ffa
Frequency - Transition:	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	46bb638de2ea693de650d7f1c3115468
Supplier Device Package:	9b3b590b14408ced9e56cc56696084a1

In Stock: 4980

Stock:

4980 Can Ship Immediately