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See Product Specifications
| номер части: | PHE13009/DG,127 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | acf70af5797317fd532641fd68230c32 |
| Voltage - Collector Emitter Breakdown (Max): | a51e6c3b115ead349deb13cbf5a43f23 |
| Vce Saturation (Max) @ Ib, Ic: | e353794f8fd7a643e90b85a12b3197af |
| Current - Collector Cutoff (Max): | b51414a9f787dc8957b6b45f6f550202 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 84d035b4ccac1014e2f7ce8f2037951f |
| Power - Max: | d28abbf52015a7f73986c7b43f042ffa |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
| Supplier Device Package: | 9b3b590b14408ced9e56cc56696084a1 |
