PHK12NQ10T,518

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See Product Specifications

Mfr. #:

PHK12NQ10T,518

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 11.6A 8SO

Упаковка:

Tape & Reel (TR)

Datasheet:

PHK12NQ10T,518 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHK12NQ10T,518
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	f757977ed8e10eaea55d049e41a64fb6
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	b4a94315bf0daeb50cba30be6240b89f
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	c4c0c60e6988bb99695980ffd0c06910
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4639fb07f5a3a06f3c3e171798342460
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	0c77390c0854c484118b6e1f2c281eb5
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	d8659a3487f6717d87be76387435c9e6
Package / Case:	f80d2dd5409d1e9f8a546eb6d6a8728d