PHK4NQ10T,518

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See Product Specifications

Mfr. #:

PHK4NQ10T,518

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 8SO

Упаковка:

Tape & Reel (TR)

Datasheet:

PHK4NQ10T,518 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHK4NQ10T,518
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	68654bdb66f909a2d5dc73ef073d7d8d
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	730e0e196e702729583c9674383eddc3
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	01177817a61a55b84262ecf82d77ed01
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a3db9f8d486cf025aa10079ac197d5ec
Operating Temperature:	55ce755c497e7a4a96e8f6d89292982a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	d8659a3487f6717d87be76387435c9e6
Package / Case:	f80d2dd5409d1e9f8a546eb6d6a8728d