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See Product Specifications
| номер части: | PHK4NQ10T,518 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 336d5ebc5436534e61d16e63ddfca327 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 68654bdb66f909a2d5dc73ef073d7d8d |
| Vgs(th) (Max) @ Id: | e059cfdd0b6079599844a290801e2b56 |
| Gate Charge (Qg) (Max) @ Vgs: | 730e0e196e702729583c9674383eddc3 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 01177817a61a55b84262ecf82d77ed01 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | a3db9f8d486cf025aa10079ac197d5ec |
| Operating Temperature: | 55ce755c497e7a4a96e8f6d89292982a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | d8659a3487f6717d87be76387435c9e6 |
| Package / Case: | f80d2dd5409d1e9f8a546eb6d6a8728d |
