PHM12NQ20T,518

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See Product Specifications

Mfr. #:

PHM12NQ20T,518

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 200V 14.4A 8HVSON

Упаковка:

Tape & Reel (TR)

Datasheet:

PHM12NQ20T,518 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHM12NQ20T,518
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:	8d6133819be37b0219811049d251aa5e
Drive Voltage (Max Rds On, Min Rds On):	f55852362a6379a6e139b5f0e28daf22
Rds On (Max) @ Id, Vgs:	57f9ecd2b51fc58a38eccb5364f615b4
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	3c309df0dab075d5fb4f85fd7f1eb952
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	2774bde10a31d29afb7f14b30cc64830
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	e6115e6b64f7d623eb1f668cebc67c58
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	1d1917d3b4813b654f0405046fcb0f3a
Package / Case:	c79ca9f723e3537386b66c9c45d603c8