PHM30NQ10T,518

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See Product Specifications

Mfr. #:

PHM30NQ10T,518

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 37.6A 8HVSON

Упаковка:

Tape & Reel (TR)

Datasheet:

PHM30NQ10T,518 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHM30NQ10T,518
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	64427fd7796d76679fafb0e128367f43
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	3d675873681002b44fda6981b23bcaa3
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	7f3bd2a7f241e93bfadb512b5db4ad56
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	5aff97e5ab4e55222be8d9f12d9471ca
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	e6115e6b64f7d623eb1f668cebc67c58
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	1d1917d3b4813b654f0405046fcb0f3a
Package / Case:	c79ca9f723e3537386b66c9c45d603c8