PHT4NQ10LT,135

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Mfr. #:

PHT4NQ10LT,135

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 3.5A SOT223

Упаковка:

Tape & Reel (TR)

Datasheet:

PHT4NQ10LT,135 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHT4NQ10LT,135
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	2081024d0cd498bb88106bb15dc5b53e
Drive Voltage (Max Rds On, Min Rds On):	ca780190014b60ca18e65ea3a5bdf39b
Rds On (Max) @ Id, Vgs:	d93c3fc3dafbc6acb9d6e78fefd40c34
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	c99154a9c6beb3e8ad617f7193e0ac2d
Vgs (Max):	7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:	f9307a1353c84054301aca7327788117
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	13d013146bc84cc268270ef7b0d62851
Operating Temperature:	55ce755c497e7a4a96e8f6d89292982a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f27e2dc3e48be4a06c65e42db2423474
Package / Case:	6dc6563daf7a3377ce355c876bce0c9b

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Stock:

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