PHU11NQ10T,127

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See Product Specifications

Mfr. #:

PHU11NQ10T,127

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 10.9A IPAK

Упаковка:

Tube

Datasheet:

PHU11NQ10T,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHU11NQ10T,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	0b02e8d515b53bc63ce942e22649b143
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	fb6292220a8061d4990ba4aabf8c1c1f
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	5b6af96a68bed1d9e348fc877504f3f4
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	ecdfc826c64864ae5c9be159b1bbb872
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	f7c79dac8f63f6d3805f4892302a3653
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	d6fc0ca06a01a70da20a6b2b00f6ba27
Package / Case:	54e97b06ca67f0676121b669811db9d1