PHW80NQ10T,127

Images are for reference only
See Product Specifications

Mfr. #:

PHW80NQ10T,127

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 80A TO247-3

Упаковка:

Tube

Datasheet:

PHW80NQ10T,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHW80NQ10T,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	f62bcea93691757a98ebc71a7b6990f8
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	363ae3ae905b65a79dfbcd1038dd627f
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	170939aa86c3f7968b3275ad3d856757
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	1623a5be55b87f565db7a0d03938fa0c
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	beb616dee7c435a13d90999375f5b529
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	566bc0f44c33782e0104763798b071ab
Package / Case:	748a8539a6c3c7dbdb455218c72fac40