PMDPB56XN,115

Images are for reference only
See Product Specifications

Mfr. #:

PMDPB56XN,115

Mfr.:

NXP USA Inc.

Описание:

MOSFET 2N-CH 30V 3.1A HUSON6

Упаковка:

Tape & Reel (TR)

Datasheet:

PMDPB56XN,115 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PMDPB56XN,115
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Arrays
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	2b5689f57c402bfbecf4b1f4e5ad8759
FET Feature:	b1bdfad45563eb49e8648bcec381ba5b
Drain to Source Voltage (Vdss):	9ec92e92d0efca44e7ef022a61c49068
Current - Continuous Drain (Id) @ 25°C:	1e26684c9876e110ee415a648adda9a7
Rds On (Max) @ Id, Vgs:	40eccfdbb581b1fe8e630a3fc45669f2
Vgs(th) (Max) @ Id:	f710eedc1bf5fdb1a1e1a08d92eb0502
Gate Charge (Qg) (Max) @ Vgs:	ab7eb9aa28ecb36be7735ac0d6e9ba9f
Input Capacitance (Ciss) (Max) @ Vds:	c80025188ef7112bae61e9e586703913
Power - Max:	c86d75efa40a0f69a8521f773e17e1fa
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	c6d18f5cddfd33aab8c271dd5756afd6
Supplier Device Package:	ae589c9af38e6936c8da41f24b7c0917

In Stock: 54000

Stock:

54000 Can Ship Immediately