PMN35EN,115

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See Product Specifications

Mfr. #:

PMN35EN,115

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 30V 5.1A 6TSOP

Упаковка:

Tape & Reel (TR)

Datasheet:

PMN35EN,115 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PMN35EN,115
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	6133c904a72e5b66b1ed4bd6240cd7f6
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	c57c42d5a5ea630bcc4289c51395ee97
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	018bb83bdcefd9e979bac57c354c3457
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	7de0842c871ea70ade55b38ffd9877a8
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ae2350350ba6e5a69d2dc91b08eae7b5
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	758f2a973d780c497b60becf003d153e
Package / Case:	ba9086440b12ae203cf29e9ec113b2c0