PMT200EN,115

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See Product Specifications

Mfr. #:

PMT200EN,115

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 1.8A SOT223

Упаковка:

Tape & Reel (TR)

Datasheet:

PMT200EN,115 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PMT200EN,115
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	3b437a53014701941592ce6f203c35ba
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	a63de20ce63831b768186579f9e6b398
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	9a935c8a1e91b57e9b3af740b54c1dd2
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	0c263e58fbdef72dd507498654c20685
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	5bb458a322ca6d0717d710c21c5ae1fd
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f27e2dc3e48be4a06c65e42db2423474
Package / Case:	6dc6563daf7a3377ce355c876bce0c9b