PMZB290UNE,315

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See Product Specifications

Mfr. #:

PMZB290UNE,315

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 20V 1A DFN1006B-3

Упаковка:

Bulk

Datasheet:

PMZB290UNE,315 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PMZB290UNE,315
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	45a48804a6be1a50f1da045aa07cbd8c
Drive Voltage (Max Rds On, Min Rds On):	72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:	f3c6bf696bad1ca3dd9f1e96a13f1c03
Vgs(th) (Max) @ Id:	1ea93de703116d58049e22f5a98960d1
Gate Charge (Qg) (Max) @ Vgs:	090360386f6da85f5d11049f563ed2bc
Vgs (Max):	141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:	458362cdfa5888490e86698b58b7c7df
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	733758913b59970257c9b1590eb9ed7b
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	206e763e75b22ff7f967fa1ab5cf74b8
Package / Case:	712561badb0e7c3e9ec18eb67d158a45