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See Product Specifications
| номер части: | PQMD12Z |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 7ba1f6ec7f544456008433cc373dff5d |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Resistor - Base (R1): | d80113e8d6286cadac92afe87493ba31 |
| Resistor - Emitter Base (R2): | d80113e8d6286cadac92afe87493ba31 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | b971ba7c54d5fd21a790e84a95cddbbc |
| Vce Saturation (Max) @ Ib, Ic: | 4ae20ada8dca14e7a8fa27578a596f15 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| Frequency - Transition: | f9d1805d96be790f6e421208da8b5526 |
| Power - Max: | 30363daec6a2cf8068adc4aa1e8f8141 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | f5408f1372b1545afd08efd9a8e44ed1 |
| Supplier Device Package: | dfe7bcace5d7657d228eb5938c1e1e0f |
