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See Product Specifications
| номер части: | PSMN4R3-100ES,127 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | b1be509671d214bd598752c2a709fdac |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 4e16c9915f9d90c9093be8c32b98de26 |
| Vgs(th) (Max) @ Id: | e059cfdd0b6079599844a290801e2b56 |
| Gate Charge (Qg) (Max) @ Vgs: | 8b77adac0ebc81e22c54854abccb3aea |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 9530984b4a6fb5183844e68273953d89 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | b6efe50a08d51b2908e2de6965551867 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | e7d1654b091636fc60031c07098afbfb |
| Package / Case: | 3c85f5f088979d743b17a76deb22d687 |
