PSMN4R3-100ES,127

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See Product Specifications

Mfr. #:

PSMN4R3-100ES,127

Mfr.:

NXP USA Inc.

Описание:

TRANSISTOR >30MHZ

Упаковка:

Tube

Datasheet:

PSMN4R3-100ES,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN4R3-100ES,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	4e16c9915f9d90c9093be8c32b98de26
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	8b77adac0ebc81e22c54854abccb3aea
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9530984b4a6fb5183844e68273953d89
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b6efe50a08d51b2908e2de6965551867
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e7d1654b091636fc60031c07098afbfb
Package / Case:	3c85f5f088979d743b17a76deb22d687