PSMN4R6-100XS,127

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Mfr. #:

PSMN4R6-100XS,127

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 70.4A TO220F

Упаковка:

Tube

Datasheet:

PSMN4R6-100XS,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN4R6-100XS,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	d155666148770f69013b17be9834363e
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	f19d1cab90ffd9807be70b11894c3f41
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	0e278ccb3c00300b322685325c453f9c
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9530984b4a6fb5183844e68273953d89
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	92ad32eb11b6c90d4f62e26d58b06e04
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	0b3f3c936192051240c8337b7cfe4c02
Package / Case:	86d82bd3155c0131fae120cbf0f8aff6

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Stock:

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