PSMN7R8-120ESQ

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See Product Specifications

Mfr. #:

PSMN7R8-120ESQ

Mfr.:

NXP USA Inc.

Описание:

POWER FIELD-EFFECT TRANSISTOR, 7

Упаковка:

Bulk

Datasheet:

PSMN7R8-120ESQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN7R8-120ESQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	53b3b1ea0de8e56a28871162445a88f6
Current - Continuous Drain (Id) @ 25°C:	47916a4829b89bb236b00d9cd3628313
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	1001d00d303a889019ded5515b51de44
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	b5807a3baa15b639e30632be7c16acf9
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9913499b8dae7ee0ae97da56d077113f
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ede0f3ab5ad3c15ff1b3b36b0ef2723c
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e7d1654b091636fc60031c07098afbfb
Package / Case:	3c85f5f088979d743b17a76deb22d687