PSMN8R0-30YLC115

PSMN8R0-30YLC115

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PSMN8R0-30YLC115
Mfr.:
Описание:
N-CHANNEL POWER MOSFET
Упаковка:
Bulk
Datasheet:
PSMN8R0-30YLC115 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PSMN8R0-30YLC115
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:NXP USA Inc.
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:70f1ad0bd592447451367fd227343121
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:45de1b07c090958ff2a941f42060c1cb
Vgs(th) (Max) @ Id:4dcddd1b5de4247eb0799ba51d9c4ae4
Gate Charge (Qg) (Max) @ Vgs:b8a0640fe9525616e9f66bccd7456bd2
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:6a103071d4b6574e76a65317444db53f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0c6019a9db9912572c44701aada80fd8
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9cc28b89246b1d3406f15784a316dd1e
Package / Case:5c758174f491275ad8924bc0627a08e5
In Stock: 0
Stock:
0 Can Ship Immediately
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