PSMN8R5-108ESQ

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See Product Specifications

Mfr. #:

PSMN8R5-108ESQ

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 108V 100A I2PAK

Упаковка:

Tube

Datasheet:

PSMN8R5-108ESQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN8R5-108ESQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	60e4b76ff7b52f39750bde947cc556b3
Current - Continuous Drain (Id) @ 25°C:	2245848f877e5b6b5b95182a6641d1ff
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	c44548732935e80c6d52f7558e7b0610
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	a9167c1be9b57a631c0e53d6de15bb57
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	3de60ad0fc49638385e144caf48a4480
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	beb616dee7c435a13d90999375f5b529
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e7d1654b091636fc60031c07098afbfb
Package / Case:	3c85f5f088979d743b17a76deb22d687