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See Product Specifications
| номер части: | 2N5885G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | onsemi |
| Упаковка: | Tray |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 33a395e98b397699d016c1ff66f08018 |
| Voltage - Collector Emitter Breakdown (Max): | 5568a11e95c42251b4839598cb5b4518 |
| Vce Saturation (Max) @ Ib, Ic: | ca8cc7a45facb744c76847ec72f0b773 |
| Current - Collector Cutoff (Max): | 9b3b8771e13fbd5a8439f5d5873c2489 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 52d3c1a7dcb8645e83923a7c20d7b28c |
| Power - Max: | 7b2d4bf616509806611d6dafe030ae20 |
| Frequency - Transition: | 550516a79299d4aa4cb3d6655c89c3a8 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | acacc2b55ee43fad1b569abde9a9b21c |
| Supplier Device Package: | 54dbc4053bc3e0a11942cefbd575ac86 |
