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See Product Specifications
| номер части: | 2N6491G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | onsemi |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 192ea1990df41f495cec1f25a3ca9750 |
| Voltage - Collector Emitter Breakdown (Max): | ebd7aaeec2792ddf9fe1af48370ec717 |
| Vce Saturation (Max) @ Ib, Ic: | 7ea596697f4ebe854369e446a20ef90f |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | f84932c64548424cb171eef76f0b6a32 |
| Power - Max: | 9cee3d097681c4d3c73593078ce577cc |
| Frequency - Transition: | 82aa77bab5d706da206e72dbf2145081 |
| Operating Temperature: | 55ce755c497e7a4a96e8f6d89292982a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
| Supplier Device Package: | 21023271cb741070ebf3efcc38cc7f20 |
