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See Product Specifications
| номер части: | 2SC5551AE-TD-E |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | onsemi |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | 9ec92e92d0efca44e7ef022a61c49068 |
| Frequency - Transition: | 9709d23f942d5f54bdc6dbd66a40de42 |
| Noise Figure (dB Typ @ f): | 336d5ebc5436534e61d16e63ddfca327 |
| Gain: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 2b51bf10a90e84273072326525adb219 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 6fafc7da939fb2cda751ceca020f24a5 |
| Current - Collector (Ic) (Max): | 1de53ed5717eb34f14b560d4082932b2 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 80047cf912aa748ae51ce6180b581cf9 |
| Supplier Device Package: | 118521dac91c1adbaeb39eb130e63473 |
