2SJ632-M-TD-E

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See Product Specifications

Mfr. #:

2SJ632-M-TD-E

Mfr.:

onsemi

Описание:

2SJ632 - P-CHANNEL SILICON MOSFE

Упаковка:

Bulk

Datasheet:

2SJ632-M-TD-E Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SJ632-M-TD-E
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	onsemi
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	336d5ebc5436534e61d16e63ddfca327
Technology:	336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):	336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:	336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	336d5ebc5436534e61d16e63ddfca327
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:	336d5ebc5436534e61d16e63ddfca327
Package / Case:	336d5ebc5436534e61d16e63ddfca327

In Stock: 47000

Stock:

47000 Can Ship Immediately