2SJ635-TL-E

2SJ635-TL-E

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2SJ635-TL-E
Mfr.:
Описание:
2SJ635 - P-CHANNEL SILICON MOSFE
Упаковка:
Bulk
Datasheet:
2SJ635-TL-E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2SJ635-TL-E
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:onsemi
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:45a7caf307977e3e68e27161a8faf377
Drive Voltage (Max Rds On, Min Rds On):f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:b3085d40e31ecb083a5a3066f30cd81a
Vgs(th) (Max) @ Id:7525d0af2b683627b369b647f422e60f
Gate Charge (Qg) (Max) @ Vgs:0f6138812f9ed4814918fa97e4fa176e
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:03adc8e79724d41b2c10c47f3780b282
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):654a40025f57077da3b4db18c3e7e09b
Operating Temperature:9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:0a41f2dd923676871312de0e840d302e
Package / Case:54e97b06ca67f0676121b669811db9d1
In Stock: 4400
Stock:
4400 Can Ship Immediately
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