FAM65HR51DS2

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See Product Specifications

Mfr. #:

FAM65HR51DS2

Mfr.:

onsemi

Описание:

IGBT MODULE 650V 33A 135W

Упаковка:

Tube

Datasheet:

FAM65HR51DS2 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	FAM65HR51DS2
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Modules
Производитель:	onsemi
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Configuration:	c41a4fe386ab7b32c43e172365ff31ac
Voltage - Collector Emitter Breakdown (Max):	347f255197950e6b02089b73b6a8acdd
Current - Collector (Ic) (Max):	06c4865268cf7709134803271a6b4e45
Power - Max:	534d76ba432ee5243d872c520b136aa8
Vce(on) (Max) @ Vge, Ic:	336d5ebc5436534e61d16e63ddfca327
Current - Collector Cutoff (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Cies) @ Vce:	b42e88fa90c0e939b0388c77c9215787
Input:	eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:	bafd7322c6e97d25b6299b5d6fe8920b
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:	336d5ebc5436534e61d16e63ddfca327