FDB0260N1007L

FDB0260N1007L

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FDB0260N1007L
Mfr.:
Описание:
MOSFET N-CH 100V 200A TO263-7
Упаковка:
Tape & Reel (TR)
Datasheet:
FDB0260N1007L Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:FDB0260N1007L
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:onsemi
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:c04561299890317337cf01a5b61198d6
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:a046205810df1023fb4220d8aa40c3f8
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:28b10f27cf4ce6aa4f367863056f8fb0
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:baef2ea55e5a7f6b353893c19ec843db
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):eee07da54a8444d30d752b1d04f7585c
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:265fa23fae77f27cc531604968c799aa
Package / Case:51d69279f96728da2ba75fa31467039b
In Stock: 0
Stock:
0 Can Ship Immediately
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