FQB13N10LTM

FQB13N10LTM

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FQB13N10LTM
Mfr.:
Описание:
MOSFET N-CH 100V 12.8A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
FQB13N10LTM Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:FQB13N10LTM
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:onsemi
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:44527a2314703a310fe1ce1c9db8df4d
Drive Voltage (Max Rds On, Min Rds On):f55852362a6379a6e139b5f0e28daf22
Rds On (Max) @ Id, Vgs:a49f7986cd5ada8f14824b5c29a99283
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:95046148058b855c1c325b07293d6ee7
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:4dbd20080f8f8401666752b28fe9d5ee
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):1027e071d9558b8b03049d1f87172f36
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:bf4aa032e4c992412ea226c67524cac7
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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